IISc develops low-power quantum memoryBengaluru, July 31 (UNI) Researchers at the Indian Institute of Science (IISc) have developed a new technology that could help build faster, smaller and more energy-efficient computers in the future, including quantum computers.
"Our initial goal was to understand whether these competing magnetic states could be controlled directly using an electric current," Mondal said.
"What is fundamentally new is that the electric current doesn't just reverse the magnetisation.
The researchers said the breakthrough is particularly significant for quantum computers, which operate at extremely low temperatures and require memory devices that consume very little energy.
If successful, the technology could pave the way for a new generation of low-power electronic devices and more efficient quantum computing systems.
IISc develops low-power quantum memory
Bengaluru, July 31 (UNI) Researchers at the Indian Institute of Science (IISc) have developed a new technology that could help build faster, smaller and more energy-efficient computers in the future, including quantum computers.
The study, published in the journal *Nature Communications*, shows that a tiny electric current can change the magnetic state of a special material, allowing it to store information using far less power than existing technologies.
Explaining the research, PhD scholar Suryakant Mondal, the study's first author, said the team initially wanted to find out whether different magnetic states in the material could be controlled directly by electricity.
"Our initial goal was to understand whether these competing magnetic states could be controlled directly using an electric current," Mondal said.
The researchers used a material called Sm₁₋ₓSrₓMnO₃. When a small electric current is passed through it, electricity flows easily because the material is in a magnetic state known as ferromagnetic. However, when the current crosses a critical level, the material shifts to an antiferromagnetic-like state, causing electrical resistance to increase sharply.
This creates two distinct states—similar to the binary "0" and "1" used by computers to store information.
Unlike conventional memory technologies, which simply reverse the direction of magnetism, the IISc team found a way to completely change the material's magnetic phase using electricity.
"What is fundamentally new is that the electric current doesn't just reverse the magnetisation. It changes the magnetic phase of the material. This gives us two clearly distinguishable resistance states. This could be useful for cryogenic memory and logic technologies," said Bhagwati Prasad, Assistant Professor in the Department of Materials Engineering, who led the study.
To demonstrate the technology, the researchers built miniature devices measuring about 250 nanometres across—thousands of times thinner than a human hair. The devices showed two stable resistance states and could be controlled using electric current, temperature and magnetic field.
The researchers said the breakthrough is particularly significant for quantum computers, which operate at extremely low temperatures and require memory devices that consume very little energy.
They now plan to reduce the amount of current needed for switching, develop devices that can operate over a wider range of temperatures and integrate them into larger cryogenic memory and logic circuits.
If successful, the technology could pave the way for a new generation of low-power electronic devices and more efficient quantum computing systems.
UNI BDN
